多晶硅定向生长的数值模拟研究  

Research on Numerical Simulation for the Directional Growth of Polycrystalline Silicon

作　　者：罗玉峰[1,2,3] 胡云[1] 张发云[2,3] 廖宾[1] 张斌[1] 

机构地区：[1]南昌大学机电工程学院,江西南昌330031 [2]新余学院新能源科学与工程学院,江西新余338004 [3]江西省高等学校硅材料重点实验室,江西新余338004

出　　处：《铸造技术》2011年第10期1368-1371,共4页Foundry Technology

基　　金：2009年校级招标课题资助项目(xj0901);2010江西省教育厅科技项目(GJJ10647)

摘　　要：利用多物理场有限元软件COMSOL Multiphysics3.5(a)对多晶硅定向凝固过程进行数值模拟,获得了定向凝固过程中加热熔化和结晶过程的温度场分布。通过对模拟结果的分析,得到了多晶硅熔化过程温度分布和结晶时固液界面形状,为后续生产实践中工艺方案的优化及缺陷分析等提供重要的理论依据。In this paper,based on the finite element COMSOL Multiphysics3.5（a） software,numerical simulation of directional solidification process for the polycrystalline silicon was conducted.The distributions of the temperature field for the melting and crystallization process of polycrystalline silicon were obtained.By analyzing this simulated results the process of polycrystalline silicon melting and the shape of solid-liquid interface were obtained.It will provide an important theoretical basis for optimizing technological program and defects analyzing in the follow-up productive practice.

关 键 词：多晶硅 定向凝固 数值模拟 温度场 

分 类 号：TN304.12[电子电信—物理电子学]