非化学计量比靶材溅射制备Cu-Al-O薄膜的光学电学性质研究  

Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target

作　　者：潘佳奇[1] 朱承泉[1] 李育仁[1] 兰伟[1,2] 苏庆[1,2] 刘雪芹[1,2] 谢二庆[1,2] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]兰州大学磁学与磁性材料教育部重点实验室,兰州730000

出　　处：《物理学报》2011年第11期613-617,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50802037)资助的课题~~

摘　　要：考虑到铜铝溅射速率的差别,使用铜铝比例为0.9:1的多晶CuAlO2靶材,用射频磁控溅射法制备Cu-Al-O薄膜.研究不同衬底温度对薄膜光学电学性能的影响.在衬底温度500℃附近,薄膜在可见光范围内具有很好的透光性,达到70%,计算拟合得到直接帯隙为3.52eV,与CuAlO2相的理论值符合较好.在室温附近,薄膜导电符合半导体热激活机理,在衬底温度为500℃附近薄膜电导率达到2.48×10-3S·cm-1.Taking account difference in sputtering rate between Cu and Al,we use a polycrystalline CuAlO2 target with a ratio between Cu and Al being 0.9∶1 to prepare the Cu-Al-O film by RF magnetron sputtering.The electrical and the optical properties of the thin film are influenced by the temperature of the substrate.When the substrate temperature is around 500℃,the film has a good transmission of 70% in the range of the visible light.Calculated by the fitted formula,the direct band gap is 3.52 eV,and it is in good agreement with the theoretical value.Near room temperature,the thin film conforms to the semiconductor thermal activation mechanism,when the substrate temperature is about 500℃,the film conductivity reaches 2.48×10-3 S·cm-1.

关 键 词：Cu-Al-O 衬底温度 透过率 电导率 

分 类 号：O484.1[理学—固体物理]