中红外半导体光源和探测器件及其应用  

Mid-infrared semiconductor light sources,detectors and its applications

作　　者：张永刚[1] 顾溢[1] 李耀耀[1] 李爱珍[1] 王凯[1] 李成[1] 李好斯白音 张晓钧[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《红外与激光工程》2011年第10期1846-1850,共5页Infrared and Laser Engineering

基　　金：国家973计划(2006CB604903);863计划(2006AA03Z0406);国家自然科学基金(60136010;60876034;60406008;60676026)

摘　　要：中红外波段(2～25μm)的光电子器件在气体检测、红外遥感和红外对抗等领域都有重要应用。介绍了笔者近年来在中红外波段的半导体光源和光电探测器方面的工作进展,包括InP基量子级联激光器、2μm波段锑化物量子阱激光器和波长扩展InGaAs光伏型探测器的研制以及器件应用方面的工作。这些光电子器件所用高性能材料都是笔者采用分子束外延方法生长的,中红外分布反馈量子级联激光器可在高于室温下脉冲工作,2μm波段锑化物量子阱激光器可在80℃下连续波工作,室温工作InGaAs探测器的截止波长扩展已至2.9μm。这些器件已在气体检测等方面获得应用。The optoelectronic devices in mid-infrared （2-25 μm） band have important applications in gas detection, infrared remote sensing, infrared countermeasure, etc. Our efforts on the development of midinfrared semiconductor light sources and photodetectors, including InP-base quantum cascade lasers, 2 μm band antimonide quantum well lasers and InGaAs photovoltaic detectors with expansion length were reviewed. The high performance materials for those devices were based on our molecular beam epitaxy grown wafers. Pulse operation of mid-infrared distribution feedback quantum cascade lasers was achieved, and continuous wave operation of 2 ~m band antimonide multi quantum well lasers at 80 ℃ was reached. The cut off wavelength of room temperature operation InGaAs photodetector was extended to 2.9 μm. Those devices had been used for gas detection, etc.

关 键 词：中红外 半导体激光器 光电探测器 化合物半导体 分子束外延 

分 类 号：TN24[电子电信—物理电子学]