氧等离子体辅助脉冲激光沉积法制备PMN-PT薄膜的微观结构和电学性能(英文)  

Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition

作　　者：何邕[1,2] 李效民[1] 高相东[1] 冷雪[1,2] 王炜[1,2] 

机构地区：[1]中国科学院上海硅酸盐研究所,高性能陶瓷和超微结构国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049

出　　处：《无机材料学报》2011年第11期1227-1232,共6页Journal of Inorganic Materials

基　　金：National Basic Research Program of China(973 Program)(2009CB623304);National Natural Science Foundation of China(11090332)

摘　　要：采用氧等离子体辅助脉冲激光沉积方法(PLD)在硅衬底上,制备出高度(001)取向的钙钛矿相结构钛铌镁酸铅(PMN-PT)薄膜.研究了氧等离子体辅助对PMN-PT薄膜相结构、微观形貌和电学性能的影响.结果表明,通过在薄膜沉积过程中引入高活性的氧等离子,可以有效地提高PMN-PT薄膜的结晶质量和微观结构.未采用氧等离子体辅助PLD方法制备PMN-PT薄膜的介电常数(10 kHz)和剩余极化(2Pr)分别为1484和18μC/cm2,通过采用氧等离子体辅助,其介电常数和剩余极化分别提高至3012和38μC/cm2.Lead magnesium niobate-lead titanate（PMN-PT） ferroelectric thin films with composition near the morphotropic phase boundary（MPB） were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition （PLD）.Highly（001）-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were obtained.The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process.With the use of oxygen plasma,the dielectric constant of the PMN-PT thin film is increased from 1484 to 3012,the remnant polarization（2Pr） changes from 18 μC/cm2 to 38 μC/cm2.

关 键 词：脉冲激光沉积法 PMN-PT薄膜 微观结构 电学性能 

分 类 号：TQ174[化学工程—陶瓷工业]