UHV/CVD生长SiGe/Si材料分析及应用研究  

Growth of SiGe/Si Heterostructures by UHV/CVD

作　　者：周志文[1] 叶剑锋[1] 

机构地区：[1]深圳信息职业技术学院电子与通信学院,深圳518029

出　　处：《深圳信息职业技术学院学报》2011年第3期29-32,共4页Journal of Shenzhen Institute of Information Technology

基　　金：深圳信息职业技术学院科研基金资助(YB201003)

摘　　要：以Si2H6和GeH4为生长气源,采用UHV/CVD系统在Si(100)衬底上生长了Si1-xGex合金和Si1-xGex/Si多量子阱结构。采用X射线双晶衍射仪、扫描电子显微镜和原子力显微镜等仪器设备对样品的组份、界面和表面形貌等晶体质量进行了研究。SiGe合金中Si和Ge摩尔分数的比值随着Si2H6和GeH4流量比的增加按比例线性增加,比例因子为2.57。生长的Si0.88Ge0.12合金样品的界面清晰,表面平整,平均粗糙度仅为0.4 nm,位错密度低于104/cm2。六周期Si0.88Ge0.12/Si多量子阱的X射线双晶衍射摇摆曲线中存在多级卫星峰和Pendellosung条纹。这些结果表明SiGe合金和SiGe/Si多量子阱均具有很好的晶体质量。Sil-xGex alloys and Sil-xGex/Si multiple quantum wells （MQWs） are grown on Si （100） by ultrahigh vacuum chemical vapor deposition （UHV/CVD） using pure Si2H6 and GeH4 as reactant gases. The Ge content, interface and surface morphology are studied, using double crystal X-ray diffraction, scanning electron microscopy and atomic force microscopy. It is found that the mole fraction ratio of Si to Ge increases linearly with the gas flow ratio of Si2H6 to GeH4, and the scaling factor is 2.57. The Si0.88Ge0.12 alloy shows clear interface, smooth surface with a root-mean-square roughness of 0.4 nm, and a low threading dislocation density of less than 104/cm2. The X-ray diffraction curves of six-period Sil-xGex/Si MQWs present satellite peaks and Pendellosung streaks. These results indicate the good crystalline quality of SiGe alloys and SiGe/Si MQWs.

关 键 词：SIGE合金 SiGe/Si多量子阱 外延生长 UHV/CVD 

分 类 号：TN304[电子电信—物理电子学]