Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode  

作　　者：陈丰平 张玉明 张义门 汤晓燕 王悦湖 陈文豪 

机构地区：[1]School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University [2]School of Technical Physics,Xidian University

出　　处：《Chinese Physics B》2011年第11期446-450,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61006060);the 13115 Innovation Engineering of Shaanxi Province,China(Grant No.2008ZDKG-30)

摘　　要：The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.

关 键 词：4H-SIC junction barrier Schottky offset field plate electrical characteristics 

分 类 号：TN311.7[电子电信—物理电子学] O471.5[理学—半导体物理]