注氮ZnO:Mg薄膜的热稳定性研究  

A Study on the Thermal Stability of N implanted ZnO:Mg films

作　　者：薛书文[1] 梅芳[1] 肖世发[1] 莫东[1] 黄子康[1] 

机构地区：[1]湛江师范学院物理科学与技术学院,广东湛江524048

出　　处：《湛江师范学院学报》2008年第6期24-28,共5页Journal of Zhanjiang Normal College

基　　金：湛江师范学院科研基金资助项目(L0503)

摘　　要：利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO:Mg薄膜,将能量56 keV、剂量1×1017ions/cm2的N离子注入到薄膜中.离子注入后,将样品在500-900℃的氮气中退火,利用X射线衍射(XRD)和光吸收研究了薄膜中缺陷的恢复过程.结果显示,离子注入层在600-900℃的退火过程中分解和蒸发现象明显,这个结果对利用离子注入技术制备p型ZnO有很重要的意义.ZnO:Mg films were deposited on fused silica glass by sol-gel process.N ions of 56 keV to a fluence of 1×1017 ions/cm2 were implanted into ZnO:Mg films.The implanted films were annealed in nitrogen at 500-900 ℃.XRD and optical absorption were used to investigate the structural recovery of N implanted ZnO:Mg films.Results showed that thermal evaporation and decomposition existed during thermal annealing at 600-900 ℃.Our observation is important for fabrication of p-ZnO by ion implantation.

关 键 词：ZNO薄膜 离子注入 XRD 吸收 

分 类 号：TN304.21[电子电信—物理电子学]