电-声相互作用对多层低维系统I-V特性的影响  

The Influence to the I-V peculiarty of multi-layer low-dimnesional semiconductor system including electron-phonon coupling

作　　者：李娜[1] 屈晔[1] 蔡敏[1] 

机构地区：[1]华南理工大学物理科学与技术学院,广东广州510640

出　　处：《云南大学学报（自然科学版）》2005年第S2期41-48,共8页Journal of Yunnan University(Natural Sciences Edition)

摘　　要：采用紧束缚方法对多层低维半导体系统在有电子与声子作用情况下的I-V特性进行了研究.对计算结果进行分析后,探讨了将此系统应用到集成电路中所产生的影响.The I-V peculiarty of muli-layer low-dimensional semicaonductor system including electron-phonon coupling intraction are investigated with the tight-binding method.After our results are assayed,the impact are discussed if the IC are made from the structure.

关 键 词：共振隧穿 势阱 击穿 哈密顿量 

分 类 号：O472[理学—半导体物理]