N型硅和铝界面的时域介电谱  

Time Domain Dielectric Spectroscopy of N Silicon-Aluminium Interface

作　　者：范仰才[1] 周镇宏[1] 李景德[1] 

机构地区：[1]广东工业大学电介质物理研究所

出　　处：《广东工业大学学报》1997年第4期18-21,共4页Journal of Guangdong University of Technology

摘　　要：用微分时域介电谱方法在液氮温度下研究了掺磷硅单晶和铝接触界面势垒层的性质．观察到除通常频域方法能测出的快极化响应外，还存在三种不同的慢极化机构．响应时间为１．１２ｍｓ、０．６９ｓ和２９．０ｓ的慢效应可分别解释为载流子扩散、施主能级激发和表面俘获能级的贡献．The properties of potential barrier at the contact between a silicon single crystal with built-in phosponus and aluminium are studied using time domain differential dielectric spectroscopy. In the liquid nitrogen temperature, there are one fast polarization and three slow polarization mechanisms. The latter three slow effects can be respectively explained as contribution of three components by carriers diffuse, bonor energy levels stimulate and surface captures energy levels.

关 键 词：硅单晶 界面 时域 介电谱 

分 类 号：O472[理学—半导体物理]