GaAs－InP异质材料的结构特性和光学特性研究  

GROWTH AND OPTICAL CHARACTERISTIC OF GaAs/InP HETEROMATERIAL

作　　者：陈松岩[1] 李玉东[1] 孙洪波[1] 王本忠[1] 刘式墉[1] 张玉贤[1] 

机构地区：[1]集成光电子学国家联合重点实验室吉林大学实验区

出　　处：《光子学报》1996年第2期140-146,共7页Acta Photonica Sinica

摘　　要：我们在低压金属有机汽相沉积（ＭＯＣＶＤ）设备上采用两步升温法与金属有机源流量周期调制生长界面过渡层方法制备出ＧａＡｓ－ＩｎＰ材料，并对此进行了Ｘ－射线衍射、低温光致发光谱（ＰＬ）和Ｒａｍａｎ谱分析，结果表明，ＧａＡｓ外延层的位错密度低于用两步升温法得到的ＧａＡｓ材料，ＰＬ谱峰较强，ＧａＡｓ的特征激子峰和杂质相关的激子峰同时被测到．Ｒａｍａｎ谱ＰＬ谱的峰移表明ＧａＡｓ外延层处于（１００）双轴伸张应力下，应力大小随温度变化是由于ＧａＡｓ、ＩｎＰ之间的热膨胀系数不同。GaAs/InP heteromaterial by MOCVD is reported in the paper.The transition Iayer is grown by both two-step temperature-raising process and metalorganic source modulation epitaxy(MOSME)technique.The measurement of Raman and PL spectrum has been made,it indicates that GaAs epitaxial layer has a lower dislocation density and a strong PL spectrum peak.GaAs charateristic exciton peak and corresponding impurity exciton peak have been detected simultaneously.The shift of Raman peak has been observed,it suggests that a(100)biaxial tensile stress exists in GaAs epilayer The difference in the tensile stress with temperature variation has something to do with the difference of thermal expansion coefficient between GaAs and InP.

关 键 词：GaAs-InP导质材料 X-射线衍射 低温光致发光谱 RAMAN谱 

分 类 号：O472.3[理学—半导体物理]