高声速(100)择优取向AlN薄膜的制备和性能研究  

Preparation of high-speed AlN thin film with(100) preferential orientation and its chracteristic research

作　　者：郭燕[1] 陈希明[1] 杨保和[1] 孙连婕[1] 吴晓国[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384

出　　处：《光电子．激光》2011年第12期1807-1809,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(50972105,60806030);天津自然科学基金(09JCZDJC16500,08JCYBJC14600)资助项目

摘　　要：采用射频磁控溅射法,通过改变工艺参数在n型(100)Si片上制备了表面粗糙度小、以(100)面择优取向的AlN薄膜。研究了高温退火、N2结尾等工艺对AlN薄膜择优取向的影响。结果表明,增大工作气压有利于薄膜(100)面择优取向,但是随着工作气压升高薄膜沉积不均匀,通过退火可以减少这种缺陷;N2-Ar比低有利于(100)面择优生长,但是容易使薄膜含有Al成分,通过以N2结尾可以减少薄膜中的Al成分,并从分子平均自由程和能量角度探讨了其对AlN压电薄膜择优取向的影响。AlN thin films with small surface roughness and preferential orientation （100） have been de posited on Si （100） substrates by RF magnetron sputtering. In order to enhance the quality, effects of pa ramters under conditions annealed at high temperature and finished with Nz were studied. The results show that the AlN （100） film is easily formed at high sputtering pressure,but defect such as roughness takes place at the same time. On this occasion,annealing treatment will be helpful. The AlN （100） orientation is also increased with the decreae of proportion of N2. Meanwhile, the films contain Al. In this case, the experiment finished with N2 will be better. The influence of preferential orientation of AlN thin film from energy and the mean free path of sputtering particles are also discussed.

关 键 词：(100)面择优取向 ALN薄膜 退火 以N2结尾 

分 类 号：O484[理学—固体物理]