Sn掺杂ZnO半导体纳米线的制备、表征及光学性能  

Fabrication,Characterization and Optical Property of Sn-doped ZnO Nanowires

作　　者：郭佳林[1] 常永勤[1] 王明文[2] 陆映东[1] 王彪[1] 龙毅[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]北京科技大学应用学院,北京100083

出　　处：《材料导报（纳米与新材料专辑）》2011年第2期88-90,共3页

基　　金：新世纪优秀人才支持计划(NCET-07-0065);北京市自然科学基金(1092014);北京市科技新星计划(2006A18)

摘　　要：采用化学气相沉积法获得了Sn掺杂含量约为2.4%(原子分数)的Sn掺杂ZnO半导体纳米线。X射线衍射结果表明,Sn的掺杂并没有改变ZnO的纤锌矿结构。掺杂纳米线的室温光致发光光谱在409.2nm和498.0nm处出现了蓝绿光发光峰。探讨了其发光机制,认为前者可能来源于从导带到Zn空位形成的浅受主能级的跃迁以及从氧空位形成的浅施主能级到价带的跃迁;而后者来源于从氧空位形成的浅施主能级到锌空位浅受主能级的跃迁。Sn-doped ZnO nanowires with Sn content of about 2.4at% were fabricated by chemical vapor deposi tion method. XRD result shows that the ZnO wurtzite structure is not changed by Sn doping. Room temperature pho toluminescence spectrum reveals that there exist two emission peaks, one is 409.2nm and another is 498. 0nm The e mission mechanism of the Sn-doped ZnO nanowires was also discussed. The emission at 409.2may originate the transi tion from the conduction band to the energy level of Zn vacancy, and the energy level of oxygen vacancy to the valence band. The emission peak centered at 498. 0 nm may ascribe to the transition from the energy level of oxygen vacancy to that of Zn vacancy.

关 键 词：Sn掺杂 ZNO纳米线 光致发光 发光机制 CVD 

分 类 号：TB383[一般工业技术—材料科学与工程]