含氧碳源提高金刚石膜沉积速率的研究  

Research on Improving Growth Rate of Diamond Film by the Addition of Oxygen-containing Gas

作　　者：李德贵[1,2] 冉均国[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610065 [2]百色学院物理与电信工程系,百色533000

出　　处：《材料导报（纳米与新材料专辑）》2011年第2期208-211,共4页

基　　金：国家自然科学基金(10275046)

摘　　要：采用微波等离子体化学气相法合成的金刚石膜质量好,但采用常规CH4-H2反应气体体系,金刚石膜的沉积速率较慢。为此,实验研究了C2H5OH-H2、CH3COCH3-H2等含氧体系下碳源浓度、微波功率、气体压力对金刚石膜沉积速率、表面形貌、电阻率的影响。结果表明,使用C2H5OH-H2、CH3COCH3-H2等含氧体系,金刚石膜的生长速率可达0.6μm/h以上,较常规CH4-H2体系提高1倍以上,并且金刚石膜的纯度高(80%以上)、晶型好、电阻率高。引入含氧碳源是一种提高金刚石膜沉积速率的有效方法。The diamond films with. excell, ent qualities were successfully synthesized by microwave plasma chemical vapor deposition （MPCVD）. However, the growth rate of diamond film is very slow with the conventional system of CH4-H2. In order to improve its growth rate, the processes and mechanisms of improving its deposition rate and qualities were studied by introducing into various oxygen-containing compounds, such as C2 H5 OH, CH3 COCH3, etc.. The influence of different microwave power, concentration of carbon radicals and gas pressure on the resistivity, growth rate and surface morphology of diamond films were studied. The results show that with the gas systems containing oxygen, the growth rate of diamond film is up to 0. 6μm/h, which at least doubles that with the CH4-H2 system, and the diamond film is of high purity （more than 80%） and resistivity. Accordingly, the addition of oxygencontaining gas is an available way to improve the growth rate.

关 键 词：金刚石膜 生长速率 微波等离子体化学气相沉积 

分 类 号：TB43[一般工业技术]