用变温霍尔效应估测锑化铟的禁带宽度  

Estimate the band gap of InSb by temperature dependent Hall effect

作　　者：樊洁平[1] 努耳[1] 艾合买提江[1] 原如领[1] 王海燕[1] 

机构地区：[1]北京师范大学物理系,北京100875

出　　处：《大学物理》2011年第11期32-34,52,共4页College Physics

摘　　要：通过变温霍尔效应实验获得锑化铟的霍尔系数随温度变化的数据,根据半导体的霍尔系数随温度的变化规律,计算出禁带宽度,并且着重讨论禁带宽度的两种求法,比较了两种方法的计算精度.In this paper, we obtain data about the Hall voltage of InSb changing with temperature. According to the relationship of the Hall coefficient of semiconductor and temperature, we calculate the band gap by using two methods, and compare the difference between the two methods for calculating the band gap.

关 键 词：载流子 本征激发 禁带宽度 霍尔系数 

分 类 号：O471.5[理学—半导体物理]