GaAs基半导体激光器热特性  

Thermal characteristic of GaAs-based laser diodes

作　　者：乔彦彬[1] 冯士维[1] 马骁宇[2] 王晓薇[2] 郭春生[1] 邓海涛[1] 张光沉[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]中国科学院半导体研究所,北京100083

出　　处：《红外与激光工程》2011年第11期2134-2137,共4页Infrared and Laser Engineering

基　　金：国家863计划(2009AA032704);北京市自然科学基金(4092005);教育部博士点基金(20091103110006)

摘　　要：对GaAs基808 nm半导体激光器进行恒流老化试验,并利用电学法观察退化过程中激光器有源区温度变化和热阻,发现有源区温度随老化时间明显上升,而热阻没有明显变化,同时测试了老化过程中激光器的电学和光学特性,经分析,激光器失效的主要原因是有源区载流子非辐射复合增加,引起激光器有源区温度上升,从而说明电学法热特性测试是检测激光器退化的有效方法之一,为进一步提高激光器的热管理技术和改善其热特性奠定了一定的基础。In order to analyze the thermal characteristic of GaAs-based laser diodes during degradation, aging tests were carded out under the conditions of the constant current stress for 808 nm GaAs-based laser diodes. The temperature of active layer and the thermal resistance were investigated by using electrical method. It was found that the temperature of active layer raise with the increase of aging time, while thermal resistance had not changed during aging tests. At the same time, the electrical and optical properties were measured, which indicated that the main reason for degradation was the increase of nonradiative recombination in the active layer. The results show that the degradation of the laser diodes can be observed effectively through thermal property measuring by using electrical method. The experimental results establish the foundation of improving the thermal management technology and thermal properties of laser diodes.

关 键 词：电学法 热特性 半导体激光器 阈值电流 非辐射复合 

分 类 号：TN248.4[电子电信—物理电子学]