基于电容模型的多层栅FFET研究  

Multi-layer FFET research based on capacitors model

作　　者：张振娟[1] 陆健[1] 

机构地区：[1]南通大学电子信息学院,江苏南通226019

出　　处：《计算机工程与应用》2011年第35期54-57,共4页Computer Engineering and Applications

基　　金：江苏省自然科学基金(No.BK2010275);南通市应用研究计划项目(No.K2010014);江苏省大学生实践创新计划项目

摘　　要：通过SILCAVO软件仿真了铁电场效应晶体管漏极电流L特性。在研究了单层栅极的结构铁电场效应管的Id与铁电参数（ε,Ec，Pr，Ps／Pr）的关系基础上，提出了一种新型结构一电容模型多层栅极结构的铁电场效应管研究，发现具有多层栅极结构的铁电场效应晶体管的工作电压较高，具有抗干扰的优点；在栅极电压介于3-4V之间容易饱和极化，器件输出特性稳定，对材料性能不敏感，易于制造和便于电路设计；其极化前后输出的漏极电流差较大，有利于信号的分辨，提高电路工作效率。仿真结果为人们研究高性能铁电场效应晶体管提出了一个新的思路。The drain current Id characteristic of the ferroelectric field effect transistor FFET is simulated by the SILCAVO software in this paper.On the study of the relationship between Id and εf,Ec,Pr,Ps/Pr of the one-layer FFET, a new type of structure-capacitors model multi-layer FFET is put forward.This structure with multi-layer FFET shows a high operating voltage and the advantage of anti-jamming.When the gate voltage is 3-4 V, it is easy to be saturated polarized.And with applying the saturated voltage,the device output is stable and not sensitive to the material properties.This is good at circuit design and fabrication.The difference of Id before and after polarization is larger,which can help distinguish the signal and the circuit efficiency is improved.The simulation results propose a new idea for people to study high-performance FFET.

关 键 词：铁电场效应晶体管 极化 矫顽场 漏极电流 电容模型 

分 类 号：TP391.1[自动化与计算机技术—计算机应用技术]