电子束蒸发法制备MoO_3薄膜及其性质研究  

Properties of MoO_3 Films Deposited by Electron Beam Evaporation

作　　者：魏昭荣[1] 杨定宇[1] 朱兴华[1] 杨维清[1] 

机构地区：[1]成都信息工程学院光电技术学院,成都610225

出　　处：《电子科技大学学报》2011年第6期933-936,共4页Journal of University of Electronic Science and Technology of China

基　　金：国家自然科学基金(50902012)

摘　　要：采用电子束蒸发法在玻璃衬底上制备MoO3薄膜。X射线衍射谱表明制备样品属于正交晶系,沿<010>晶向择优取向生长。随着衬底温度的升高,样品的晶粒尺寸先增大后减小,退火后又增大。此外,样品的(040)衍射峰随衬底温度升高单调向低衍射角方向移动。扫描电镜照片显示制备样品具有针状晶粒特征,退火后晶粒大小的分布趋于均匀。紫外–可见透过谱测试发现,随衬底温度的升高,一方面样品的光吸收边向长波方向移动,透过率降低;另一方面,样品的光学带隙由100℃时的2.93 eV降为300℃时的2.59 eV,经过500℃大气氛围下退火后,光学带隙减小至2.46 eV。MoO3 films were deposited on glass substrates by electron beam evaporation method. X-ray diffraction patterns revealed that the prepared samples presented orthorhombic structure with preferred orientation of （010）. As substrate temperature increased, the grain size increases firstly then decreases, but increases once more after annealing. Moreover, the diffraction peak of （040） plane shifts to lower angle monotonically with increased substrate temperature. Scanning electron microscope images show needle-like grains and their size becomes more uniform after annealing. With increased subsutrate temperature, the sample optical absorption edge in ultraviolet -visible spectra shift to longer wavelength and the transmittance also decreases. On the other hand, the optical gap reduces from 2.93 eV to 2.59 eV when substrate temperature increases from 100 ℃ to 300 ℃, and even reduces to 2.46 eV after air annealing under 500 ℃.

关 键 词：晶体结构 电子束蒸发 MoO3薄膜 表面形貌 紫外-可见透过谱 

分 类 号：TB34[一般工业技术—材料科学与工程]