高功率微波对PCB电路系统辐照效应的仿真分析  

Simulation of irradiation effects of high power microwave on PCB circuits

作　　者：张薇[1] 杜正伟[1] 

机构地区：[1]清华大学电子工程系,微波与数字通信技术国家重点实验室,北京100084

出　　处：《强激光与粒子束》2011年第11期2841-2844,共4页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：以实验室自主研发的2维半导体器件-电路联合仿真程序用于分析高功率微波注入下半导体器件的毁伤机理,以此2维半导体器件-电路联合仿真程序为基础加以扩展,添加了电磁波辐照射下微带线的SPICE电路模型。扩展后的程序可以同时用于分析平面波入射下含半导体器件的PCB电路的高功率微波辐照效应和置于带孔缝屏蔽腔中的PCB电路的高功率微波辐照效应。应用此仿真程序分析了一个含有低噪声放大器的简单PCB电路,得到了该PCB电路在不同形式平面波入射下低噪声放大器的烧毁阈值,在该PCB电路置于屏蔽腔中时,低噪声放大器输入端口出现耦合干扰电压情况。Our laboratory has developed a two-dimensional semiconductor device simulator to analyze the burnout mechanism of semiconductor devices with high power microwave injection.In this paper,the simulator is further developed to include the SPICE model of microstrip lines irradiated by an incident wave.The developed simulator can be used to analyze the high power microwave irradiation effects on PCB circuits with semiconductor devices.With the developed simulator,a practical PCB circuit including a low noise amplifier（LNA） is simulated in two cases,i.e.the PCB circuit is directly irradiated by an uniform plane wave and the PCB circuit is placed in a shielding cavity with a slot during irradiated.For the first case,different incident modes of plane wave are simulated and the burnout thresholds of LNA are given.For the second case,the coupled input voltages of LNA are given for different slot forms.

关 键 词：高功率微波 半导体器件 SPICE模型 PCB电路 屏蔽腔 

分 类 号：TN01[电子电信—物理电子学]