石墨烯双势垒结构中的输运特性  

Transport properties of double-barrier structures in graphene

作　　者：张红梅[1] 

机构地区：[1]河北科技大学理学院,河北石家庄050018

出　　处：《河北科技大学学报》2011年第6期536-540,共5页Journal of Hebei University of Science and Technology

基　　金：国家自然科学基金资助项目(10974043);河北科技大学基金资助项目(XL200825)

摘　　要：利用Landauer-Büttiker散射理论和传递矩阵方法研究了单层石墨烯双势垒结构中的隧穿几率和电导。计算结果表明:即使存在克莱因隧穿效应,单层石墨烯双势垒结构中的量子隧穿仍然与势阱宽度和势垒高度密切相关。隧穿几率和电导表现出复杂的振荡行为,振荡的振幅和周期敏感地依赖于势阱宽度、势垒高度、电子的入射能量和入射角度。因此,可以通过改变系统的结构参数对单层石墨烯双势垒结构中的电子输运性质进行控制。Based on the Landauer-Biittiker scattering formalism and transfer matrix method, the transmission coefficient and the conductance of electrons tunneling through a double-barrier structure in the monolayer graphene are investigated. The results indicate that the transmission probability is related directly to the well width and the harrier height, even if Klein tunneling exists in the graphene structure. The transmission coefficient and the conductance exhibit complicated oscillations. The magnitude and period of oscillation depend sensitively on the well width, the barrier height, the incident energy and the incident angles of carriers. Thus, the transport properties of a double-barrier structure in the monolayer graphene can be controlled by the configuration of the structure.

关 键 词：石墨烯 双势垒结构 隧穿 DIRAC方程 

分 类 号：O641.12[理学—物理化学]