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作 者:祝文韬[1] 李小进[1] 蔡静[1] 胡少坚[2] 王勇[2] 李曦[1] 石艳玲[2]
机构地区:[1]华东师范大学信息学院电子系,上海200241 [2]上海集成电路研发中心,上海201203
出 处:《电子器件》2011年第6期641-644,共4页Chinese Journal of Electron Devices
基 金:国家重大科技专项(2009ZX02023-2-1);上海市科委启明星计划(09QB1402000)
摘 要:提出了一种隔层不重叠的新型结构片上螺旋电感,其实现工艺与标准CMOS多层布线技术兼容。结合螺旋电感的集总模型,利用电磁场仿真软件HFSS进行了该器件的模拟仿真,与相同结构参数和工艺参数的传统不隔层交叠多层电感相比,提出的新型电感在品质因子、自谐振频率、3dB带宽等性能参数上明显改善,其中电感品质因子提高3.5%,带宽增加65%,自谐振频率提高127%,且最大品质因子处对应的电感值达到nH量级,符合射频电路应用的需求。An on-chip spiral inductor with non-overlapping structure has been presented. Its manufacturing process is compatible with the standard CMOS multi-layer process. Based on the lumped model of the spiral inductor, the proposed inductor has been simulated using HFSS. At the same time, performance comparisons between the proposed inductor and the traditional multi-layer inductor have been carried out with the same process parameters. Simulation results show that the proposed achieve an increase of 3.5 % for the maximum quality factor, an increase of 65 % for the BW, and an increase of 127% for the self resonance frequency. Meanwhile, the inductance frequency range of maximum quality factor is around several nil, and can meet the requirement of most RF circuits.
分 类 号:TM55[电气工程—电器] TN603[电子电信—电路与系统]
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