GaN HEMT器件中子辐照效应实验研究  

Experimental Study of Neutron Irradiation Effects on GaN HEMT Devices

作　　者：王燕萍[1] 罗尹虹[1] 张科营[1] 王园明[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《固体电子学研究与进展》2011年第6期540-544,共5页Research & Progress of SSE

摘　　要：建立了GaN HEMT器件(氮化镓高电子迁移率晶体管)中子原位测试技术和辐照效应实验方法,开展了GaN HEMT器件脉冲反应堆中子辐照效应实验研究,重点研究了电离辐射和位移损伤对器件性能退化的影响,获取了GaN HEMT中子位移损伤效应敏感参数和效应规律。结果表明,阈值电压、栅极泄漏电流以及漏极电流是中子辐照损伤的敏感参数,讨论了器件性能退化的各种辐射损伤机制。The online testing techniques and the experimental methods of neutron radiation effects on GaN HEMT （high electron mobility transistor） devices have been established, and the radiation effects experiments of pulsed neutron reactor on GaN HEMT devices were carried out. The emphasis was on device performance degradation caused by ionizing radiation and displace- ment damage. The GaN HEMT neutron displacement damage sensitive parameters and effeeted pattern were obtained. The threshold voltage, gate leakage current and leakage current as the sensitive parameters of the neutron irradiation damage have been validated by experiments, and the degradation of the device performance of various radiation damage mechanism has been discussed.

关 键 词：氮化镓 高电子迁移率晶体管 中子辐照 

分 类 号：TN386[电子电信—物理电子学]