自支撑GaN基核辐射探测器的Ⅰ-V特性研究  

Study of Ⅰ-V Characteristics of Free Standing GaN-based Nuclear Radiation Detectors

作　　者：王果[1,2,3] 付凯[1] 姚昌胜[1] 王金延[3] 陆敏[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [2]北京大学深圳研究生院,广东深圳518055 [3]北京大学,北京100871

出　　处：《固体电子学研究与进展》2011年第6期559-562,629,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(10875084);江苏省自然科学基金资助项目(BK2008174);苏州市应用基础研究计划资助项目(SYJG0915);国家重点基础研究发展计划资助项目(G2009CB929300)

摘　　要：使用自支撑GaN基材料制备了Schottky结构核辐射探测器,研究了探测器不同偏压扫描下的I-V特性。偏压从零偏向正偏扫描和从正偏向零偏扫描的I-V特性曲线并不重合;偏压从零偏向反偏扫描和从反偏向零偏扫描的曲线不重合性并没有正偏明显。测试并分析了PL谱图,得出I-V特性曲线不重合的原因是:从零偏到正偏的导电机制是热生载流子,正偏到零偏的导电机制是大注入的非平衡载流子。Free standing GaN-based Schottky nuclear radiation detector has been fabricated, and I-V characteristics of the detector have been studied under different bias voltages. I-V char-acteristics curves scaning from forward bias to zero are not coincident with from zero to forward bias,while current change scaning from zero bias to forward are not so evident as from forwardbias to zero. PL spectrum are measured and analysed, furthermore, it is concluded that noncoincidence of I-V characteristics curves is due to the different current transport mechanism which isconsidered to be thermal equilibrium carrier as scaning from reverse bias to zero but high-level injection of non-equilibrium carriers as scaning from forward bias to zero.

关 键 词：自支撑氮化镓电流-电压特性 PL谱图 

分 类 号：O47[理学—半导体物理] TL814[理学—物理]