GaAs半导体薄膜电沉积的研究  

STUDY ON ELECTRODEPOSITED GaAs SEMICONDUCTOR FILMS

作　　者：杨春晖[1] 徐吾生[1] 韩岩 杨兆明 韩爱珍[2] 叶水驰[2] 高元凯 

机构地区：[1]哈尔滨工业大学应用化学系,哈尔滨150001 [2]哈尔滨工业大学航天学院,哈尔滨150001

出　　处：《太阳能学报》2000年第1期110-113,共4页Acta Energiae Solaris Sinica

摘　　要：利用改进试验装置 ,及在简单盐溶液中加入添加剂的方法 ,电沉积制备出 Ga As薄膜。扫描电镜和 X射线衍射仪测试结果表明 ,薄膜成分更接近化学计量比 1∶ 1,各次试验数值分散性小 ,厚薄均匀。The GaAs films are obtained with electrodeposition technology which puts additives to simple salt solutions in an rehabilitated experimental sut up.The measurement show that the composition of the films is approximate to stoichiometric ratio 1∶1 by SEM and XRD,and both of the dispersivity of experiment data and the homogeneity of the films thickness are enhanced.

关 键 词：GaAs薄膜 电沉积 添加剂 半导体薄膜 

分 类 号：TN304.230[电子电信—物理电子学]