Er/Yb/Al掺杂ZnO薄膜的结构与形貌研究  

Study on the structure and morphology of Er/Yb/Al-doped ZnO thin film

作　　者：韩利新[1] 张宁玉[1] 霍庆松[1] 宋红莲[1] 

机构地区：[1]山东建筑大学理学院,山东济南250101

出　　处：《山东建筑大学学报》2011年第5期425-428,446,共5页Journal of Shandong Jianzhu University

基　　金：住房和城乡建设部研究开发项目(2010-K4-15);山东建筑大学博士基金(010180921)

摘　　要：采用射频磁控溅射技术在室温下Si衬底上制备了ZnO薄膜和Er/Yb/Al掺杂的ZnO薄膜。通过对XRD的结构分析表明:未掺杂ZnO薄膜沿c取向性生长,掺杂ZnO薄膜偏离了正常生长,变为(102)取向性生长的纳米多晶结构;Er/Yb/Al掺杂的ZnO薄膜的晶粒尺寸随着Er元素含量的增多而减小。经AFM对其形貌分析表明:Er3+、Yb3+、Al3+的掺入引起了ZnO薄膜晶格场变化,使薄膜表面粗糙度变大。ZnO thin films and Er/Yb/Al-doped ZnO thin films on Si substrate were fabricated by using RF magnetron sputtering method at room temperature. The XRD structure analysis shows that undoped ZnO thin film grows along the C orientation, but doped ZnO thin films deviate from the normal growth orientation and become nano-multi-crystal structure which is along （102） orientation and the crystallite size of ZnO thin film doped the Er/Yb/Al decreases with the increase of the content of the Er element. The morphology by AFM analysis shows that Er^3＋、Yb^3＋、Al^3＋ that is doped in the ZnO thin films cause a change of crystal field and make the surface roughness larger.

关 键 词：射频磁控溅射 ZNO薄膜 掺杂 结构 形貌 

分 类 号：O484.1[理学—固体物理]