提拉法制备铜单晶基片的化学机械抛光研究  

Study on Chemical Mechanical Polishing of Cu Single Crystal Wafer Prepared by Czochralski Method

作　　者：娄有信[1] 王继扬[1] 张怀金[1] 李强[2] 严清峰[2] 马朝晖[3] 戴媛静[4] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]清华大学化学系,北京100084 [3]辽宁大学物理学院,沈阳110036 [4]清华大学摩擦学国家重点实验室,北京100084

出　　处：《人工晶体学报》2011年第6期1418-1422,1428,共6页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973)资助项目(2010CB833103)

摘　　要：采用提拉法成功制备出高纯铜(Cu)单晶,最大尺寸为15 mm×60 mm。采用化学机械抛光(CMP)方法对Cu单晶基片进行抛光,借助光学显微镜、表面轮廓仪和扫描探针显微镜分析了基片表面形貌、表面粗糙度与表面均匀性,并探讨了抛光压力、表面活性剂和抛光垫对基片表面抛光的影响,结果表明:采用CMP加工后的铜单晶基片表面无宏观划痕、加工均匀性好,基片表面粗糙度Ra为0.921 nm。The bulk Cu single crystal with the size of Ф15 mm × 60 mm was prepared by Czochralski technique. Cu single crystal wafers were polished by a so-called chemical-mechanical polishing （CMP） method. The surface morphology, uniformity and roughness of as-polished wafer were analyzed by optical microscopes, surface profiler and scanning probe microscopy. The influence of polishing pressure, surface active agent and polishing pad on polishing quality was discussed. The results indicate that there is no macroscopic scratch on the as-polished wafer surface with good uniformity and the Ra value of Cu wafer is 0.921 nm in the final finishing polishing process.

关 键 词：单晶铜 化学机械抛光 表面粗糙度 

分 类 号：TG356.28[金属学及工艺—金属压力加工]