PECVD法制备非晶硅薄膜及光电性能研究  

PECVD Method on Amorphous Silicon Thin Film and Study of Electro-optical Property

作　　者：曹阳[1] 武光明[2] 高德文[2] 张志乾[1] 周洋[1] 

机构地区：[1]北京化工大学,北京100029 [2]北京石油化工学院,北京102617

出　　处：《纳米科技》2011年第6期31-34,52,共5页

摘　　要：采用等离子体增强化学气相沉积（PECVD）方法在玻璃衬底上制备出非晶硅薄膜，利用正交试验法对射频功率、气体总压、硅烷比例、沉积时间、退火温度、退火时间因素进行了研究，对透过率和电阻率进行了分析，结果表明，采用PECVD法成功制备出非晶硅薄膜。正交实验表的分析得知，气体总压对透过率影响最大；硅烷比例对电阻率影响最大。制备非晶硅薄膜的优化条件为：射频功率30W、气体总压100Pa，硅烷5％、沉积时间5min、退火温度300℃、退火时间45min。非晶硅薄膜的光透过率93．18％，电阻率为13．238kΩ·cm。Amorphous silicon thin films were deposited on glass substrates by using the PECVD（plasma enhanced chemical vapor deposition）method.The effects of Rf power, gas total pressure,silane scale,deposition time,annealing temperature,annealing time were studied by orthogonal test method, through rate and resistivity were analyzed.The results showd that the amorphous silicon thin film preparation was successed by PECVD method. The orthogonal experiment table analysis results showed that the greatest impact factor to through rate was total gas pressure the greatest influence factor to resistivity was silane proportion. The optimality condition of preparing of amorphous silicon thin film was Rf power was 30W, gas total pressure was 100Pa, the ratio of hydrogen and silane hydrogen was 5%, deposition time was 5min, an- nealing temperature was 300℃, annealing time was 45min.Through rate of amorphous silicon films was 93.18%,and resistivisy was 13.238kΩ.cm.

关 键 词：PECVD法 非晶硅薄膜 光电性能 

分 类 号：O484.4[理学—固体物理]