退火条件对氧化钒薄膜电学性能的影响  

The Effects of Annealing Conditions on the Electrical Properties of Vanadium Dioxide Thin Films

作　　者：王利霞[1] 王海云[1] 严刚[1] 

机构地区：[1]南京邮电大学理学院,江苏南京210046

出　　处：《南京邮电大学学报（自然科学版）》2011年第6期117-120,共4页Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition

基　　金：南京邮电大学科研基金(NY207029)资助项目

摘　　要：文中采用射频反应溅射法制备氧化钒薄膜,并用三段式控温退火炉对薄膜进行快速升降温退火处理。文中重点就退火条件对氧化钒薄膜的电学性能的影响进行了研究。研究结果表明:退火时间和退火温度均对薄膜电学性能有较大影响,考虑到氧化钒薄膜热敏性能要求,兼顾微测辐射热计制备工艺(即微电子机械系统(简称MEMS)工艺)要求,退火时间约1～2小时,退火温度应控制在400℃～500℃之间。This paper presents a method to prepare the vanadium oxide thin films using radio frequency （RF） reactive sputtering method, where the films are annealed in the three-section-temperature-controlled annealing furnace and a fast annealing process is applied to film crystallization. The effects of annealing conditions on the electrical properties of the vanadium oxide films is studied. The results show that there are large effects of annealing time and annealing temperature on the electrical properties of the vanadium oxide films. Considering the compatibility of the preparation process of VO2 film and the microbolometer fabrication method （ micro electromechanical system （MEMS） process）, the annealing temperature should be controlled in the range from 400℃ to 500℃, and the annealing time is about 1 -2 hours.

关 键 词：二氧化钒 快速升降温退火 电阻温度系数 微测辐射热计 

分 类 号：O47[理学—半导体物理]