红外光谱法研究射频功率对微晶硅薄膜微结构的影响  

Effect of RF-Power on the Microstructure of Microcrystalline Silicon Film by Infrared Spectroscopy

作　　者：陈城钊[1] 

机构地区：[1]韩山师范学院物理与电子工程系,广东省潮州市桥东521041

出　　处：《光谱实验室》2012年第1期537-540,共4页Chinese Journal of Spectroscopy Laboratory

基　　金：韩山师范学院青年科研基金资助项目(0503)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在硅衬底上以不同的射频功率生长微晶硅(μc-Si:H)薄膜,利用傅里叶变换红外透射光谱技术对薄膜进行测试。通过对红外透射光谱的高斯拟合分析,结果表明薄膜中的氢含量和硅氢键合模式跟射频功率密切相关;当射频率从30W增加到110W时,薄膜中的氢含量先减少后慢慢增加,而结构因子逐渐增加后再减小,并且硅氢键合模式由以SiH为主转变为以SiH_2为主。并讨论了这些参量随射频功率变化的机理。Microcrystalline silicon films on silicon substrates were prepared by RF plasma enhanced chemical vapor deposition（RF-PECVD） technique at different RF-power,which were analyzed by Fourier transform infrared spectroscopy.The results show that the hydrogen content and the silicon-hydrogen bonding configurations of the films are closely related to the RF-power,when the RF-power increased from 30W to HOW,the hydrogen content reduce first and then increase gradually,while the trend of the structural gene is on the contrary,and the major Si-H bonding configuration changes from SiH to SiH_2.The mechanism of change of the parameters along with the RF-power is discussed.

关 键 词：微晶硅薄膜 射频功率 傅里叶变换红外透射谱 

分 类 号：O657.33[理学—分析化学]