高温氩退火对直拉CZ硅单晶中空洞型微缺陷的影响  

Effect of High-Temperature Argon Annealing on Voids in CZ Silicon Wafers

作　　者：李宗峰[1] 周旗钢[1] 何自强[1] 冯泉林[1] 杜娟[1] 刘斌[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2012年第1期120-123,共4页Chinese Journal of Rare Metals

基　　金：国家科技重大专项项目(2008ZX02401)资助

摘　　要：研究了高温氩退火对大直径直拉硅单晶中晶体原生粒子缺陷(COP)的消除作用。分别在不同温度和保温时间下进行退火,然后利用表面扫描检测系统SPI测量退火前后硅片表面COP的密度变化,来表征退火对COP的消除作用。研究发现,在1200℃退火2 h能够显著降低硅单晶表面区域的COP密度,并且随着退火时间的延长COP的密度降低得越多。然后,把所有的退火硅片抛去不同的厚度,检测COP在厚度上的分布,进而得出退火对COP消除的有效距离为0～10μm。因此,可以得到高温氩退火只能够消除硅片表面的COP缺陷,而对于硅片内部的这些缺陷影响较小。The effects of high-temperature argon annealing on the annihilation of voids in large diameter（12″）CZ silicon were investigated.After argon annealing at the temperature range of 1100～1200 ℃ for 1～2 h,the concentration variation of crystal originated particles（COP） related to voids was observed by laser particle counter（KLA Tencor Surface Scan SPI）.The concentration variation of the COP could directly indicate the annealing effects.It was found that silicon wafers annealing at above 1200 ℃ in argon atmosphere could effectively reduce the COP density at the surface region in the wafer.The depth profile of the COP density was investigated by removing successive Si layers by polishing.Then the density distribution was observed by SPI.Therefore it could be concluded that surface COP could be eliminated by argon annealing with the increase of annealing temperature and the extending of annealing time while those in the bulk region were not affected.

关 键 词：直拉硅单晶 大直径 空洞型微缺陷 晶体原生粒子缺陷 高温退火 

分 类 号：TN305.2[电子电信—物理电子学]