Zn/Sb复合薄膜材料的制备及其在低温下的热电性能研究  

The Preparation and Research on Performance of Zn/Sb thin films

作　　者：疏敏[1] 王学生[1] 代晶晶[1] 戚学贵[1] 

机构地区：[1]华东理工大学机械与动力工程学院,上海200237

出　　处：《功能材料与器件学报》2011年第6期538-542,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(编号:50706012)

摘　　要：采用磁控溅射的方法,两个单靶依次在Si(100)基底上循环5次溅射制备了Zn/Sb多层复合纳米薄膜,并研究了固定调制周期为40nm时,Zn和Sb的调制比分别为1:1、3:2和4:1的三种情况下,Zn/Sb复合薄膜的Seebeck系数、电导率和功率因子在160K-250K温度范围内随温度的变化情况。采用XRD、AFM对其结构和表面形貌进行分析,发现制备的薄膜表面光滑、致密,无大颗粒,呈现出晶面择优生长的现象。实验结果表明:当调制比为4:1时,Zn/Sb薄膜的功率因子最高,且其最大值达到在174K时的7543.54μW/mK^2,但随着温度的升高,其值迅速的下降,变化趋势和幅度都很明显。The Zn/Sb multi -layer thin films were prepared by magnetron sputtering method, which was sputtered on （100） Si five times by two single target. The variations of the Seebeck coefficient, the electric conductivity and the power factor of three Zn/Sb composite films, which was of modulation ratio of 1 ： 1, 3：2 and 4 ： 1 respectively in a fixed modulation period of 40nm, were studied in the temperature range from 160K to 250K. Analyzing the structure and surface appearance by XRD and AFM, the film surface was smooth, dense, and without any macroparticles. The grains of the films grow under the preferred orientations. The experiment results show a obvious trend that the power factor decrease with increasing temperature. The power factor is at the highest value of 7543. 541.LW/mK2 in 174K, as the modulation ratio is 4：1.

关 键 词：Zn/Sb薄膜 磁控溅射 SEEBECK系数 电导率 

分 类 号：O513[理学—低温物理]