MOS器件的ESD失效  

ESD Failure of MOS Device

作　　者：赖忠有[1] 许清平[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳市471009

出　　处：《电子产品可靠性与环境试验》2011年第6期64-67,共4页Electronic Product Reliability and Environmental Testing

摘　　要：静电放电(ESD)对半导体器件,尤其是金属氧化物半导体(MOS)器件的影响日趋凸显,而相关的研究也是备受关注。综述了静电放电机理和3种常用的放电模型,遭受ESD应力后的MOS器件失效机理,MOS器件的两种失效模式;总结了ESD潜在性失效灵敏表征参量及检测方法;并提出了相应的静电防护措施。The effect of ESD on semiconductor devices,especially the MOS devices,is increasingly prominent.In this paper,the mechanism and three common models of ESD are described.The failure mechanism and failure modes of MOS devices induced by ESD are discussed.The sensitive parameters and test techniques for characterizing the potential ESD failures are also summarized.Finally,the corresponding protection methods against ESD are presented.

关 键 词：金属氧化物半导体器件 静电放电模型 静电防护 

分 类 号：TN386.1[电子电信—物理电子学]