高速集总型双耗尽电吸收调制器的研制  

Fabrication of High-speed Dual-depletion Lumped Electro-absorption Modulator

作　　者：邱应平[1] 汪洋[1] 邵永波[1] 周代兵[1] 赵玲娟[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所材料开放实验室,北京100083

出　　处：《半导体光电》2011年第6期789-792,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2011CB301702)

摘　　要：设计并研制了一种新的直脊波导集总型电吸收调制器——集总型双耗尽电吸收调制器(D-EAM)。同时,作为实验对照组,还制备了一种普通有源区结构的电吸收调制器(N-EAM)。两种器件的测试结果对比分析表明,D-EAM的电容明显要小于N-EAM。脊波导长度为250μm,宽度为2.5μm的D-EAM在-3V偏压下电容为0.225pF,对应的调制带宽估算为28.3GHz;1 550nm输入波长条件下,D-EAM在偏压为-1V至-2V之间调制效率最大,达到10dB/V,而-3V、-6V下的调制深度分别为22dB和26dB,满足40Gbit/s光纤通信要求。A novel dual-depletion lumped electro-absorption modulator （D-EAM） was designed and fabricated. Meanwhile, a normal Electro-absorption modulator （N-EAM） with active structure was fabricated for comparative study. The measured results indicate that the capacitance of D-EAM was obviously smaller than that of N-EAM. The capacitance of D-EAM with a 2. 5μm waveguide was 0. 225 pf under --3 V bias voltage and the 3 dB bandwidth correspondingly achieved 28.3 GHz. The modulation depth at --3 V was 22 dB and even 26 dB at --6 V for 1 550 nm signal input. In addition, the largest modulation efficiency attained 10 dB/V with the bias of --1---2 V. It is proved that the D-EAM can satisfy the application of 40 Gbit/ s communication system.

关 键 词：“双耗尽”有源区 电容 静态消光比 RC常数 电荷层 

分 类 号：TN491[电子电信—微电子学与固体电子学]