硅圆片多层直接键合工艺研究  

Research on Multilayer Direct Bonding Technology for Silicon Wafer

作　　者：聂磊[1,2] 钟毓宁[1,2] 张业鹏[1,2] 何涛[1,2] 胡伟男[3] 

机构地区：[1]湖北工业大学现代制造质量工程湖北省重点实验室,武汉430068 [2]湖北工业大学机械工程学院,武汉430068 [3]武汉大学动力与机械学院,武汉430072

出　　处：《半导体光电》2011年第6期800-802,843,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(50805061);湖北省教育厅科研项目(Q20111405)

摘　　要：多层圆片键合是实现三维垂直互连封装的重要工艺步骤。利用紫外辅助表面活化技术,实现了多层硅圆片的直接键合。实验将清洗后的硅圆片放置在紫外光下进行照射,经过3min的光照后显著提高了表面能,在不借助外力及电压的情况下,实现了自发性的预键合。通过红外透射观测键合界面,发现键合界面中心区无明显缺陷;对界面横断面的直接观测表明键合过渡层十分薄,证明了多层硅圆片已经结合成为一个整体,其键合工艺可应用于三维垂直通孔互连中。Multi-layer wafer bonding is one of the most important processes in three- dimensional vertical packaging. In this paper, the ultraviolet light assisted surface activation technique was applied to realize multi-layer wafer bonding; The wafers were irradiated with ultraviolet light after surface cleaning. After 3 minutes＇ ultraviolet irradiation, the surface energy was improved obviously then wafers were bonded spontaneously without additional force and voltage. The infrared transmission and SEM images showed that there was no obvious defect in the＇central zones of bonded wafers and the thickness of transitional zone was very small. Therefore it is undoubted that the wafers were bonded to one complete unit and this bonding technique could be used in three-dimensional vertical packaging.

关 键 词：多层键合 直接键合 三维封装 紫外 

分 类 号：TN305.94[电子电信—物理电子学]