闪锌矿GaN/AIGaN耦合量子点中的类氢杂质态  

Hydrogenic Impurity in Zinc-blende GaN/AIGaN Coupling Quantum Dots

作　　者：楚兴丽[1] 王艳文[2] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007 [2]新乡医学院生命科学技术系,河南新乡453003

出　　处：《河南师范大学学报（自然科学版）》2011年第4期43-45,共3页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金(10674042);河南省创新型科技人才队伍建设工程(104200510014)

摘　　要：在有效质量近似下,运用变分法计算了闪锌矿GaN/AIGaN耦合量子点中类氢杂质的施主束缚能.数值结果显示了类氢杂质的施主束缚能很大程度依赖于杂质位置和耦合量子点结构参数,当杂质位于量子点中心时,施主束缚能最大,而且随着中间垒宽的增加,杂质束缚能保持着先增加,然后不变的趋势.Within the framework of the effective-mass approximation, the donor binding energy of hydrogenic impurity states confined in a zinc-blende （ZB） GaN/AlxGal-xN coupling quantum dot s （CQDs） are investigated by means of a varia- tional approach. Numerical results show that the donor binding energy is highly dependent on the impurity position and CQDs structural parameters. When the impurity is located at the center of the quantum dot, the donor binding energy Eb is largest. And the Eb is increased firstly and then unobvious with the increasing of the barrier width.

关 键 词：耦合量子点 类氢杂质态 施主 束缚能 

分 类 号：O471.3[理学—半导体物理] O471.4[理学—物理]