High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits  

作　　者：ZHANG ZhiYong WANG Sheng PENG LianMao 

机构地区：[1]Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing 100871,China

出　　处：《Chinese Science Bulletin》2012年第2期135-148,共14页

基　　金：supported by the Ministry of Science and Technology of China (2011CB933001,2011CB933002);the Fundamental Research Funds for Central Universities;the National Natural Science Foundation of China (61071013,61001016)

摘　　要：Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator.The CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs.Together with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated circuits.Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over 160.Two adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.Ballistic n-type carbon nanotube （CNT）-based field-effect transistors （FETs） have been fabricated by contacting semiconducting single-walled CNTs （SWCNTs） using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor （MOS） FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs. Together with the demonstration of ballistic p-type CNT FETs using Pd contacts, this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor （CMOS） devices and integrated circuits. Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter was demonstrated, which had a voltage gain of over 160. Two adjacent n- and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons （3000 cm2 V〈 s-1） and holes （3300 cm2 V〈 s-X）. The CNT FETs also had excellent potential for high-frequency applications, such as a high-performance frequency doubler.

关 键 词：单壁碳纳米管 CMOS器件 集成电路制造 互补金属氧化物半导体 兴奋剂 性能 MOS场效应管 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]