InAs/GaSbⅡ类超晶格中波红外探测器  

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

作　　者：徐庆庆[1] 陈建新[1] 周易[1] 李天兴[1] 金巨鹏[1] 林春[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与激光工程》2012年第1期7-9,42,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金(61176082)

摘　　要：InAs/GaSb II类超晶格探测器是近年来国际上发展迅速的红外探测器,其优越性表现在高量子效率和高工作温度,以及良好的均匀性和较低的暗电流密度,因而受到广泛关注。报道了InAs/GaSb超晶格中波材料的分子束外延生长和器件性能。通过优化分子束外延生长工艺,包括生长温度和快门顺序等,获得了具原子级表面平整的中波InAs/GaSb超晶格材料,X射线衍射零级峰的双晶半峰宽为28.8″,晶格失配Δa/a=1.5×10-4。研制的p-i-n单元探测器在77 K温度下电流响应率达到0.48 A/W,黑体探测率为4.54×1010cmHz1/2W,峰值探测率达到1.75×1011cmHz1/2W。Infrared（IR） photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years.Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient,high working temperature,high uniformity and low dark current densities.The growth of mid-wavelength infrared InAs/GaSb superlattice on GaSb substrates by molecular beam epitaxy（MBE） was studied.The growth temperature and the interface structures to obtain high quality material were optimized.The InAs/GaSb superlattice layers were characterized by atomic force microscope（AFM） and high resolution X-ray diffraction（XRD）.Finally,highly lattice matched mid-infrared InAs/GaSb superlattice material was achieved.The FWHM of the 0th satellite peak of X-ray scanning curve is 28.8 arcsec.The p-i-n single IR photodiode based on InAs/GaSb superlattice has current responsivity of 0.48 A/W and blackbody detectivity of 4.54×1010 cmHz1/2W,and peak detectivity of 1.75×1011 cmHz1/2W at 77 K.

关 键 词：INAS/GASB 超晶格 红外探测器 分子束外延 

分 类 号：TN213[电子电信—物理电子学]