新型结构的HEMT优化设计  

Optimization Design of a Novel HEMT

作　　者：刘剑[1] 程知群[1] 胡莎[1] 周伟坚[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2012年第1期14-17,共4页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(60776052)

摘　　要：该文通过对HEMT物理模型的分析及对之前所设计的HEMT结构的总结,利用TCAD进行仿真,分析了器件中2DEG电子浓度和电子迁移率以及栅漏电流随In含量的变化规律。提出了一种新型结构Al0.3Ga0.7N/AlN/GaN/In0.1Ga0.9N/GaN HEMT,并对栅长0.25μm和栅宽100μm的器件进行了优化设计,器件的栅压为1V时,阈值电压-5.3V,最大漏电流为2 220mA/mm,获得最大跨导为440mS/mm,且在-3.5～-0.5V范围内跨导变化量很小,说明优化后的器件具有良好的线性度。This paper analyses the physical model of HEMT and summarizes the structure of HEMTs which have been presented,then the change of electron concentration and mobility of the two-dimensional electron gas（2DEG） and drain current versus Indium concentration were analyzed by TCAD.A novel Al0.3Ga0.7N/AlN/GaN/ In0.1Ga0.9N/GaN HEMT was proposed.The device with gate length of 0.25μm and gate width of 100μm was optimized by using software TCAD of device design.The threshold voltage of-5.3V and the maximum Ids of 2220mA/mm of proposed device are achieved with the gate voltage of 1V.Simulated results show the maximum transconductance of 440mS/mm and little fluctuation in the gate voltage from-3.5V to-0.5V which demonstrates the high linearity.

关 键 词：高速电子迁移率管 线性度 二维电子气 跨导 复合沟道 

分 类 号：TN401[电子电信—微电子学与固体电子学]