ESD应力下LDMOS器件软失效的分析及优化  

Analysis of Soft Failure of LDMOS Device Under ESD Stress and Its Optimization

作　　者：韩山明[1] 林丽娟[1] 喻钊[1] 蒋苓利[1] 张波[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2012年第1期134-137,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60906038)

摘　　要：分析了发生软失效的两种原因:电场诱导和热诱导。针对一种采用0.35μm BCD工艺的LDMOS器件,讨论了改变器件漂移区长度对软泄漏电流的影响。最终通过对漂移区长度以及源端和衬底接触间距的优化,消除了器件原先存在的软泄漏电流现象,并且没有过分增大器件的触发电压。Two types of soft failures,field induced soft failure and thermally induced soft failure,were analyzed.Based on an LDMOS device using 0.35 μm BCD process,effect of drift region length on soft leakage current was discussed.The phenomenon of soft leakage current existed in the device was eliminated by optimizing drift region length and space between source and substrate contacts,which did not increase triggering voltage of the device excessively.

关 键 词：ESD 软泄漏电流 软失效 LDMOS 

分 类 号：TN406[电子电信—微电子学与固体电子学]