高速高效光电探测器的制备、测试及特性分析  

Fabrication and Characterization of High-Speed and High-Efficiency Photodetector

作　　者：刘少卿[1] 韩勤[1] 杨晓红[1] 刘宇[1] 王杰[1] 王秀平[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《激光与光电子学进展》2012年第2期138-141,共4页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(60876039;61176053);国家863计划(2009AA03Z404)资助课题

摘　　要：报道了一种垂直入射的InP基InGaAs pin光电探测器,介绍了它的制备和测试方法并对器件所展示出的高效,高速,高线性度特性进行了分析。器件的暗电流密度在0和-5V偏压时分别为1.37×10-5 A/cm2和93×10-5 A/cm2;在1.55μm波长,-3V偏压下,器件的线性光响应高达28mW,相应的最大线性电流为17mA,响应度达到0.61A/W(无减反射膜);在-5V偏压下,器件获得高达17.5GHz的3dB带宽。In this paper,we demonstrate a top-illuminated InGaAs pin photodetector grown on InP substrate.The fabrication,measurement and characterization of this photodetector are discussed in this paper.Low dark current densities of 1.37×10-5 A/cm2 at 0 and 93×10-5 A/cm2 at a reverse bias of 5 V are achieved.At a wavelength of 1.55 μm,the photodetectors have a responsivity of 0.61 A/W without antireflection coating,a linear photoresponse up to 28 mW optical power and a maximum linear photocurrent of 17 mA at-3 V.The measured 3 dB bandwidth of a 22 μm-diameter photodetector is 17.5 GHz.

关 键 词：光学器件 PIN探测器 INGAAS 高速 高效 

分 类 号：O475[理学—半导体物理]