6～18GHz GaAs PHEMT5位MMIC数字移相器  

6～18 GHz GaAs PHEMT 5 bit MMIC Digital Phase Shifter

作　　者：戴永胜[1] 陈曦[1] 陈少波[1] 徐利[1] 李平[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《微波学报》2012年第1期66-69,共4页Journal of Microwaves

基　　金：国家重点基础研究发展计划973计划(2009CB320200);国家国防重点实验室基金(9140C1402021102)

摘　　要：采用GaAs PHEMT工艺研制开发了一款6～18 GHz五位MMIC数字移相器。通过建立精确的器件模型、选择合理的单位拓扑以及设计优化原理图和版图,并在优化过程中采用性能冗余优化策略,保证了产品各项性能优异和高成品率。测试的电性能典型值表明,在工作频率范围内,11.25°/22.5°移相位的相移误差<2.5°,45°/90°/180°移相位的相移误差<5°,相移均方根误差<4.5°,插入损耗保持在7dB～10.5dB的范围内,32种相移态输入端与输出端的驻波比均小于1.7,最终芯片面积仅为3.555mm×4.055mm×0.1mm,可广泛用于相控阵雷达与电子对抗等系统。A 6 - 18GHz 5 bit MMIC digital phase shifter was designed, using GaAs PHEMT technolog. High performance and yield of the product are obtained by making accurate models, choosing appropriate configuration, optimizing schematic and layout and especially using performance redundancy optimization strategy in the optimization process. The typical value of test electrical property shows that in the working frequency, the phase error of 11.25°/22.5° bit is less than 2.5°, the phase error of 45°/ 90°/180° bit is less than 5°, RMS phase shift error is less than 4.5°, the insertion loss is restriction in the range of 7dB- 10. 5dB, input and output VSWR of 32 phase shift states is less than 1.7. The ultimate chip area is only 3. 555mm×4. 055mm×0. 1mm. The chip could be widely used in phased array radar and electronic countermeasures engineering.

关 键 词：微波单片集成电路 数字移相器 砷化镓 赝配高电子迁移率晶体管 

分 类 号：TN623[电子电信—电路与系统]