F原子与Si表面相互作用的动力学研究  

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

作　　者：赵成利[1,2] 邓朝勇[2] 孙伟中[3] 吕晓丹[1] 陈峰[1] 贺平逆[1] 张浚源[3] 刘玉杰[3] 苟富均[3,4] 

机构地区：[1]贵州大学PSI研究所MEMS课题组,贵阳550025 [2]贵州大学理学院,贵阳550025 [3]四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室,成都610064 [4]荷兰皇家科学院等离子体所,荷兰2300

出　　处：《真空科学与技术学报》2012年第1期53-58,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006);贵州省优秀青年科技人才培养计划资助的课题(批准号:700968101)

摘　　要：采用分子动力学方法模拟了F原子与Si表面相互作用,F原子入射能量分别为0.3,1,3,5,7和9 eV。在模拟过程中,F原子的沉积率与Si表面悬键密度有关,而Si原子的刻蚀率与表面晶格结构破坏程度有关,随着Si原子刻蚀率的增加,样品高度降低。在不同能量F原子作用下,样品Si表面形成Si-F反应层。Si-F反应层的厚度随入射能量的增加而增加,其组成成分对产物有至关重要的影响。The interaction between the impinging fluorine atoms with different energies and Si surfaces were modeled and simulated.The impacts of the interaction conditions,such as the deposition rate and energy of the F atoms,electronic properties of Si surface,on the F-etching rate and Si-F bond formation were calculated.The simulated results show that the Si dangling bonds strongly affect the F atom deposition rate;and that the silicon etching rate significantly depends on the density of the lattice defects,created by the F sputtering.As the incident energy increases,the interaction layer,formed at the interface of gaseous F and solid Si substrate,thickens,and markedly affects the reaction products.

关 键 词：分子动力学 沉积 刻蚀 Si-F反应层 

分 类 号：TN304.12[电子电信—物理电子学]