SiC/Al_2O_3界面结构的同步辐射X射线掠入射衍射研究  

Characterization of SiC/Al_2O_3 Interface by Synchrotron Radiation X-Ray Grazing Incident Diffraction

作　　者：刘忠良[1,2] 康朝阳[2] 唐军[2] 陈香存[2] 徐彭寿[2] 潘国强[2] 

机构地区：[1]淮北师范大学物理与电子信息学院,淮北235000 [2]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《真空科学与技术学报》2012年第1期79-82,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(No.50872128);安徽省高等学校省级自然科学研究项目(KJ2010B189);安徽省自然科学基金(11040606M64)

摘　　要：采用固源分子束外延技术,以Al2O3为衬底,在1100℃下制备SiC薄膜。利用同步辐射X射线掠入射(GID)实验技术对生长的样品的界面结构进行了研究。结果表明,薄膜面内存在压应变,同时发现薄膜晶体质量在远离薄膜和衬底界面区会逐渐变好。GID和X射线衍射的摇摆曲线结果表明薄膜中镶嵌块的扭转大于倾斜,说明SiC薄膜在垂直方向的晶格排列要比面内更加有序。The SiC films were deposited by solid-source molecular beam epitaxy（SSMBE）on Al2O3 substrate at 1100℃.The microstructures at the interface of SiC and Al2O3 were characterized with synchrotron radiation X-ray grazing incident diffraction（GID）.The results show that the compressive strains existed in the plane of the film,and that the farther away from the interface,the better the SiC and Al2O3 crystalline structures.Moreover,the rocking curves of GID and XRD reveal that the twist mosaic is bigger than the tilt mosaic in the SiC films,which indicates that the lattice array in perpendicular direction is in better order than that in directions parallel to the substrate surface.

关 键 词：碳化硅薄膜 蓝宝石衬底 固源分子束外延 掠入射衍射 

分 类 号：O484[理学—固体物理] TN304[理学—物理]