沟道角度对微加速度计性能的影响  

Effect of Channel Direction on Performances of Micro-accelerometer

作　　者：史伟莉[1] 薛晨阳[1] 谭振新[1] 刘俊[1] 张斌珍[1] 张文栋[1] 

机构地区：[1]中北大学,电子测试技术国家重点实验室,仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2012年第1期10-12,共3页Instrument Technique and Sensor

基　　金：国家自然科学基金资助(50730009,50535030);国家重点基础研究发展计划资助(2008CB317104)

摘　　要：通过设计与悬臂梁呈不同角度的沟道,对GaAs基金属半导体场效应晶体管(MESFET)的微加速度计的输出特性进行了初步测试研究。设计了GaAs MESFET的材料层结构并采用四梁固支结构。通过表面浅工艺加工出GaAs MES-FET微加速度计。将敏感单元GaAs MESFET嵌入四梁靠近根部的位置。设计了3种不同的沟道角度,分别与悬臂梁呈45°、90°、0°,通过实验定量分析了GaAs MESFET在受到外力时,不同沟道角度的GaAs MESFET加速度计的灵敏度,且0°时灵敏度最高。最终指导传感器的优化设计,为进一步提高微加速度计的灵敏度奠定基础。An experimental investigation was carried out with clarifying the external mechanical stress effect on GaAs metal- semiconductor field-effect transistor（MESFET） I-V characteristic curve which as the sensitive element of micro-accelerometer in different condition. This paper researched different channel directions to explore the output characteristics of the GaAs MESFET which fabricated at the root of the cantilever. It designed three channel directions which angled with the cantilever as 0° ,45° and 90°. It is shown that when the channel direction parallel to the cantilever direction, AU has the maximum value of 12. 13 mV. The sensitivity of 0° is 0. 042 1 mV/g higher than the 90°. The dynamic result indicates that the channel direction parallel to the cantilever direction is the optimized design structure.

关 键 词：金属半导体场效应晶体管 沟道角度 灵敏度 

分 类 号：O782[理学—晶体学]