双面静电封接工艺在硅电容传感器中的应用  

Applications of Two-side Electrostatic Sealing in Silicon Capacitance Sensor

作　　者：张娜[1] 李颖[1] 张治国[1] 祝永峰[1] 董春华[1] 殷波[1] 

机构地区：[1]沈阳仪表科学研究院,辽宁沈阳110043

出　　处：《仪表技术与传感器》2012年第1期13-15,共3页Instrument Technique and Sensor

摘　　要：硅电容传感器由于其结构的精密性与灵敏性,常规的静电封接工艺已无法满足要求。封接后会造成其小间隙(间隙通常<10μm)极板间的粘连,导致器件失效。文中结合小间隙传感器的结构特点提出了一种双面同时封接的方法,并对封接相关参数进行了分析,确定了相应的封接条件。该工艺既解决了极板粘连问题又简化了工艺步骤,适合现阶段大规模生产的需求。Because of its structural precision and sensitivity, the common electrostatic sealing technology can cause the adhesion between the plates of the silicon capacitance sensor,it would damage the device. A new two-side electrostatic sealing method was proposed. It is more suitable for the special structure of the small space sensor. And the factors which affect capacitance device sealing quality were also discussed. This new two-side electrostatic sealing technology is easy to implement and more practical for the mass production.

关 键 词：硅电容传感器 小间隙 双面静电封接 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]