Ge,Al共掺SiO_2薄膜的发光性能研究  

Photoluminescence Properties of Ge and Al Co-Doped SiO_2 Films

作　　者：陈虎[1] 王加贤[1] 张培[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建厦门361021

出　　处：《半导体技术》2012年第3期212-215,234,共5页Semiconductor Technology

基　　金：国家"863"计划引导项目(2002AA001013)

摘　　要：用射频磁控溅射法制备Ge,Al共掺SiO2复合薄膜并以不同温度进行退火,得到具有特定光致发光性质的复合材料。经600℃退火的薄膜样品在260 nm谱线激发下,主要有398和494 nm发光峰。通过对样品的X射线衍射谱和X射线光电子能谱的测试,确定了薄膜的结构特征,同时对观察到的光致发光从理论上做了重点分析,认为双重配位的Si孤对中心和GeO色心中的三重激发态到基态(T1→S0)之间的辐射跃迁分别是产生414和398 nm发光峰的主要原因。实验结果表明,Al的掺入可能在GeO2晶粒中引入了新缺陷能级,从而产生494 nm这一特殊的发光带,同时Al的掺入也提高了398 nm发光峰的发光效率。The Ge and Al co-doped SiO2 films were prepared by RF magnetron sputtering technique and thermal annealing. The sample annealed at 600℃ mainly showed a special photoluminescence property to give off room temperature luminescence of 398 and 494 nm with exciting under 260 nm beam. The structure of these special films was studied by XRD, XPS and PL techniques and then the special PL spectra theories were explained. 414 and 398 nm beam photoluminescences are attributed to two-fold coordinated silicon long-pair centers and the radiation transition from excited triplet states to ground singlet states of GeO color centers respectively. The experimental results show that Al maybe be introduced the new defect levels in the GeO2 crystal, resulting 494 nm light of this special band, while the Al also increases to 398 nm emission peak luminous efficiency.

关 键 词：光致发光 Ge Al共掺SiO2复合薄膜 PL谱 缺陷中心 磁控溅射 

分 类 号：O484.41[理学—固体物理]