基于电荷泵技术的MOS器件界面特性测量方法  

Measurement Methods of Interface Property Based on Charge Pumping Techniques in MOS Devices

作　　者：胡伟佳[1,2] 孔学东[2] 章晓文[2] 

机构地区：[1]广东工业大学材料与能源学院,广州510006 [2]工业和信息化部电子第五研究所,广州510610

出　　处：《半导体技术》2012年第3期235-239,共5页Semiconductor Technology

摘　　要：随着CMOS工艺的发展,栅介质层厚度不断减薄,导致栅漏电流不断增大,这使传统测量界面态的方法应用受到限制。介绍了采用电荷泵技术用于MOS器件Si/SiO2界面特性研究,分别研究了脉冲频率、反偏置电压、脉冲幅值和占空比对泵电流的影响,对突变曲线做了深入的理论分析,指出了需要严格的选择脉冲频率、幅值、反偏置电压和占空比,才能保证测量的准确性。这些探索为电荷泵技术在MOS器件中的界面电荷测量和电荷泵曲线分析提供实验指导和理论依据。The thickness of the gate oxide is continually scaled down with the development of CMOS technologies, which would result in enhancing the gate leakage current drastically. Therefore, the conventional methods could not be suitable for characterizing interface property in ultra-thin gate oxide MOSFET＇ s. The charge pumping methods were introduced to characterize the Si/SiO2 interface property for MOS device, and the effect of pulse frequency, reverse voltage, pulse voltage amplitude and duty cycle on charge pumping current were deeply investigated, the abnormal curve also was further analyzed. It is pointed out that the pulse frequency, reverse voltage, pulse voltage amplitude and duty cycle must be strictly chosen to guarantee the accuracy of measurement. These studies can provide experimental guidance and theoretical evidence for measuring the density of interface states and analyzing Charge pumping curve in MOS device.

关 键 词：电荷泵技术 脉冲频率 反偏压 脉冲幅值 占空比 

分 类 号：TN386.1[电子电信—物理电子学]