化学机械抛光过程抛光液作用的研究进展  

Research development of the effects of polishing slurry on chemical mechanical polishing process

作　　者：邹微波[1] 魏昕[1] 杨向东[1] 谢小柱[1] 方照蕊[1] 

机构地区：[1]广东工业大学机电工程学院,广州510006

出　　处：《金刚石与磨料磨具工程》2012年第1期53-56,59,共5页Diamond & Abrasives Engineering

基　　金：国家自然科学基金项目(NO.51175092);教育部高校博士学科专项科研基金项目(NO.20104420110002);广东省自然科学基金项目(NO.10151009001000036)资助

摘　　要：化学机械抛光(CMP)已成为公认的纳米级全局平坦化精密超精密加工技术。抛光液在CMP过程中发挥着重要作用。介绍了CMP过程中抛光液的作用的研究进展,综合归纳了抛光液中各组分的作用,为抛光液的研制和优化原则的制定提供了参考依据。Chemical mechanical polishing （CMP） has been generally acknowledged as a nano-scale global planarization ultraprecision machining technology. Polishing slurry plays an important role in the chemical mechanical polishing. The authors introduce the research development of the effects of polishing slurry on CMP processes, summarize and analyze the actions of polishing slurry ingredients. This introduction and summarization will provide a reference for the development and optimization principles of polishing slurry.

关 键 词：化学机械抛光(CMP) 抛光液 材料去除率 表面质量 

分 类 号：TG73[金属学及工艺—刀具与模具]