应用SIP技术的宽带板间垂直互连结构  

Broadband Vertical Transition between Substrates in Application of SIP Technology

作　　者：周骏[1,2] 窦文斌[1] 沈亚[2] 李辉[2] 

机构地区：[1]东南大学毫米波国家重点实验室,南京210096 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2012年第1期36-39,共4页Research & Progress of SSE

摘　　要：提出了一种应用SIP技术的宽带低损耗板间垂直互连结构。采用BGA作为上下两层基板微波互连的通道,利用多层PCB技术设计并研制了一个DC-20 GHz板间三维垂直互连过渡结构,该结构在20 GHz内,回波损耗小于-12 dB,插损小于1 dB,该板间过渡结构尺寸为9.2 mm×4 mm×0.8 mm。同时提出了该种过渡结构等效电路模型,仿真结果与实测结果吻合较好。A broadband and low loss vertical transition between substrates in application of SIP technology was presented. To implement the vertical transition between the substrates, BGAs （ball grid arrays） was introduced to become the microwave signal path. The measured insertion loss of the entire vertical transition path, including feedlines, was less than 1 dB and return loss was less than -12 dB up to 20 GHz. The size of the structure is 9.2 mm×4 mm×0.8 mm. Moreover, an equivalent circuit model for the complete transition path was developed. The presented design was simulated and validated by measurement.

关 键 词：系统级封装 球形阵列 三维 垂直互连 

分 类 号：TN4[电子电信—微电子学与固体电子学] TN802