应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响  

Effect of strain compensation and growth interruption on the morphology of InAs nanostructures grown on InAs/InAlGaAs/InP

作　　者：杨新荣[1] 徐波 赵国晴[1] 周晓静[1] 王占国[2] 

机构地区：[1]邯郸学院物理与电气工程系,邯郸056005 [2]中国科学院半导体研究所半导体材料重点实验室,北京100083

出　　处：《中国科学：物理学、力学、天文学》2012年第3期237-241,共5页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(批准号:60990315);国家重点基础研究发展规划(编号:2006CB604904)资助项目

摘　　要：利用固源分子束外延(Molecular Beam Epitaxy,MBE)设备生长出InAs/InAlGaAs/InP(001)纳米结构材料,探讨了应变补偿技术和生长停顿对InAs纳米结构形貌的影响.应变补偿技术的引入导致量子点和量子线混合结构的形成,有望成为超宽带半导体激光器的有源区;生长InAs时生长停顿的引入导致尺寸分布均匀的量子线结构的形成,可作为单色激光器有源区.InAs/InAlGaAs/InP（001） nanostructure materials have been grown using solid-source molecular beam epitaxy equipment. Effects of strain compensation technique and growth interruption on morphology of InAs nanostructures have been investigated. The strain compensation technique led to the formation of hybrid nanostructure based on quantum dots and quantum wires, which have potential to act as the active region of ultra-wideband semiconductor laser. InAs quantum wires with homogeneous size distribution have been formed during growth interruption of InAs, which will serve as the active region of monochrome laser.

关 键 词：量子线 量子点 应变补偿 生长停顿 

分 类 号：O488[理学—固体物理]