基片位置对MWPCVD制备金刚石薄膜的影响  

Influence of Substrate Position on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

作　　者：俞世吉[1] 丁振峰[1] 马腾才[1] 邬钦崇[2] 

机构地区：[1]大连理工大学三束材料改性国家重点联合实验室,大连116024 [2]中国科学院等离子体物理研究所,合肥230031

出　　处：《真空科学与技术》2000年第2期131-133,共3页Vacuum Science and Technology

基　　金：863计划资助

摘　　要：在石英钟罩式微波等离子体化学气相沉积实验装置中研究了基片位置对金刚石薄膜沉积质量的影响。扫描电子显微镜显微形貌观察和激光喇曼谱分析表明 ,对微波等离子体化学气相沉积制备金刚石薄膜而言 ,基片位置处于近等离子体球下游区域将有利于改善金刚石薄膜沉积质量。Diamond films were synthesized by microwave plasma chemical vapor deposition (MWPCVD) in a quartz bell jar.Influence of substrate positions on the films growth was studied with scanning electron microscopy (SEM) and laser Raman spectroscopy.We found that quality of the diamond films grown by MWPCVD can be improved by positioning the substrate near the down stream of the plasma ball.

关 键 词：等离子体 化学气相沉积 金刚石薄膜 基片位置 

分 类 号：O613.71[理学—无机化学] TB43[理学—化学]